Semiconductor device, electronic apparatus, and method of manufacturing semiconductor device

ABSTRACT

A semiconductor chip is mounted on a first surface of an interconnect substrate, and has a multilayer interconnect layer. A first inductor is formed over the multilayer interconnect layer, and a wiring axis direction thereof is directed in a horizontal direction to the interconnect substrate. A second inductor is formed on the multilayer interconnect layer, and a wiring axis direction thereof is directed in the horizontal direction to the interconnect substrate. The second inductor is opposite to the first inductor. A sealing resin seals at least the first surface of the interconnect substrate and the semiconductor chip. A groove is formed over the whole area of a portion that is positioned between the at least first inductor and the second inductor of a boundary surface of the multilayer interconnect layer and the sealing resin.

This application is based on Japanese patent application NOs.2010-178012 and 2011-126543, the contents of which are incorporatedhereinto by reference.

BACKGROUND

1. Technical Field

The invention relates to a semiconductor device that transmits andreceives a signal using an inductor, an electronic apparatus, and amethod of manufacturing a semiconductor device.

2. Related Art

In the case where an electric signal is transferred between two circuitshaving different electric potentials of input electric signals, aphotocoupler is frequently used. The photocoupler has a light emittingelement such as a light emitting diode and a light receiving elementsuch as a phototransistor, and transfers an electric signal byconverting the input electric signal into light in the light emittingelement and returning the light to the electric signal in the lightreceiving element. However, since the photocoupler has the lightemitting element and the light receiving element, miniaturizationthereof is difficult. Further, in the case where the electric signal hasa high frequency, the photocoupler is unable to follow the electricsignal. As a technique for solving this problem, a technique oftransferring an electric signal by arranging two (one set of) inductorsto face each other and inductively coupling the respective inductors toeach other has been developed.

In Japanese Laid-open patent publication NO. 2006-066769 and JapaneseLaid-open patent publication NO. 2005-005685, two (one set of)inductors, that is, vertical (FIG. 1) and horizontal (FIG. 2) inductors,are arranged to face each other in one semiconductor chip using amultilayer interconnect of the semiconductor chip. They may bemanufactured in a standard CMOS process, and the positional precision ofthe two inductors arranged to face each other can be heightened.

Further, a semiconductor device described in Japanese Laid-open patentpublication NO. 2007-123650 and Japanese Laid-open patent publicationNO. 2007-123649 has a first inductor and a second inductor. In thissemiconductor device, input and output signal terminals are isolatedfrom each other. The first inductor is installed in a firstsemiconductor chip, and generates an electromagnetic signal based on theelectric signal input to an input unit. Further, the secondsemiconductor inductor is installed in a second semiconductor chip,generates an electric signal through reception of the electromagneticsignal from the first inductor, and outputs the generated electricsignal through an output unit. The first semiconductor chip and thesecond semiconductor chip are installed on respective lead frames, andare arranged to face each other in a state where the first and secondinductors are electrically isolated from each other. Accordingly, thefirst inductor and the second inductor are not in electrical contactwith each other, and thus it becomes possible to easily achieveisolation between the first inductor and the second inductor. Further,since no thick isolation layer is installed between the inductors, it ispossible to manufacture the semiconductor device in a standard CMOSprocess.

SUMMARY

In the case of performing transmission and reception of energy usinginductors, it is required to make two inductors face each other withgood precision in order to heighten efficiency. For this, it ispreferable to form the first inductor and the second inductor on thesame substrate. The inventor examined the fact that the winding axisdirection of the first inductor and the second inductor was directed inthe horizontal direction to the substrate, and in this case, theinventor considered that there was a possibility of a problem occurringin the isolation between the first inductor and the second inductor.

In one embodiment, there is provided a semiconductor device including aninterconnect substrate; a semiconductor chip mounted over a firstsurface of the interconnect substrate and having a multilayerinterconnect layer; a first inductor formed in the multilayerinterconnect layer, a wiring axis direction of the first inductor beingdirected in a horizontal direction to the interconnect substrate; asecond inductor formed in the multilayer interconnect layer and facingthe first inductor, a wiring axis direction of the second inductor beingdirected in the horizontal direction to the interconnect substrate; anda groove formed over the multilayer interconnect layer and positionedbetween the first inductor and the second inductor.

According to this embodiment, a groove is formed over a boundary surfacebetween a sealing resin and the multilayer interconnect layer. Thisgroove is formed over the whole area of at least a portion that ispositioned between the first inductor and the second inductor. Thisallows preventing the insulation between the first inductor and thesecond inductor from being unable to be secured is suppressed.

In another embodiment, there is provided an electronic apparatusincluding a semiconductor device; and a mount substrate mounting thesemiconductor device; wherein the semiconductor device includes aninterconnect substrate; a semiconductor chip mounted over a firstsurface of the interconnect substrate and having a multilayerinterconnect layer; a first inductor formed in the multilayerinterconnect layer, a wiring axis direction of the first inductor beingdirected in a horizontal direction to the interconnect substrate; asecond inductor formed in the multilayer interconnect layer and facingthe first inductor, a wiring axis direction of the second inductor beingdirected in the horizontal direction to the interconnect substrate; anda groove formed over the multilayer interconnect layer and positionedbetween the first inductor and the second inductor.

In still another embodiment, there is provided a method of manufacturinga semiconductor device including forming a semiconductor device having asubstrate, a multilayer interconnect layer formed over the substrate, afirst inductor formed in the multilayer interconnect layer, a wiringaxis direction of the first inductor being directed in a horizontaldirection to the substrate, and a second inductor formed in themultilayer interconnect layer and facing the first inductor, a wiringaxis direction of the second inductor being directed in the horizontaldirection to the interconnect substrate; and forming a groove over themultilayer interconnect layer and positioned between the first inductorand the second inductor.

The above-described embodiments allow preventing the insulation betweenthe first inductor and the second inductor from being unable to besecured.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, advantages and features of the presentinvention will be more apparent from the following description ofcertain preferred embodiments taken in conjunction with the accompanyingdrawings, in which:

FIG. 1 is a cross-sectional view illustrating the configuration of asemiconductor device according to a first embodiment;

FIG. 2 is an enlarged cross-sectional view illustrating theconfiguration of a semiconductor chip;

FIGS. 3A and 3B are cross-sectional views taken along line A-A′ in FIG.2;

FIGS. 4A and 4B are schematic plan views illustrating widths of a firstinductor and a second inductor;

FIGS. 5A and 5B are cross-sectional views illustrating a method ofmanufacturing a semiconductor drive illustrated in FIG. 1;

FIGS. 6A and 6B are cross-sectional views illustrating a method ofmanufacturing a semiconductor drive illustrated in FIG. 1;

FIG. 7 is a cross-sectional view of an electronic apparatus using asemiconductor device illustrated in FIG. 1;

FIG. 8 is a cross-sectional view illustrating a modified example of thefirst embodiment;

FIG. 9 is a cross-sectional view illustrating the configuration of anelectronic apparatus according to a second embodiment;

FIG. 10 is a cross-sectional view illustrating the configuration of anelectronic apparatus according to a third embodiment;

FIG. 11 is a cross-sectional view illustrating the configuration of anelectronic apparatus according to a fourth embodiment;

FIGS. 12A and 12B are cross-sectional views illustrating an example of amethod of mounting a semiconductor device on a mount substrate;

FIG. 13 is a cross-sectional view illustrating an example of a method ofmounting a semiconductor device on a mount substrate;

FIGS. 14A and 14B are schematic plan views of a semiconductor deviceaccording to a fifth embodiment;

FIGS. 15A and 15B are schematic cross-sectional views of a semiconductordevice according to a sixth embodiment;

FIGS. 16A and 16B are schematic cross-sectional views of an electronicapparatus according to a sixth embodiment;

FIGS. 17A and 17B are schematic cross-sectional views of a semiconductordevice according to a seventh embodiment;

FIGS. 18A and 18B are schematic cross-sectional views of an electronicapparatus according to a seventh embodiment;

FIGS. 19A and 19B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to an eighth embodiment;

FIGS. 20A and 20B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to an eighth embodiment;

FIGS. 21A and 21B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to a ninth embodiment;

FIG. 22 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to a ninth embodiment;

FIGS. 23A and 23B are cross-sectional views illustrating a modifiedexample of a ninth embodiment;

FIG. 24 is a cross-sectional view illustrating the configuration of asemiconductor device according to a tenth embodiment;

FIG. 25 is a cross-sectional view illustrating the configuration of asemiconductor device according to an eleventh embodiment;

FIGS. 26A and 26B are cross-sectional views illustrating a modifiedexample of a semiconductor device according to an eleventh embodiment;

FIG. 27 is a cross-sectional view illustrating the configuration of asemiconductor device according to a twelfth embodiment;

FIGS. 28A and 28B are cross-sectional views illustrating theconfiguration of a semiconductor device according to a twelfthembodiment;

FIG. 29 is a cross-sectional view illustrating the configuration of asemiconductor device according to a thirteenth embodiment;

FIGS. 30A to 30C are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to a fourteenthembodiment;

FIGS. 31A and 31B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to a fifteenthembodiment;

FIG. 32 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to a fifteenth embodiment;

FIGS. 33A and 33B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to a sixteenthembodiment;

FIG. 34 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to a sixteenth embodiment;

FIG. 35 is a cross-sectional view illustrating the configuration of asemiconductor device according to a seventeenth embodiment;

FIGS. 36A and 36B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to an eighteenthembodiment;

FIGS. 37A and 37B are views illustrating a modified example of FIGS. 36Aand 36B;

FIG. 38 is a plan view illustrating the configuration of a semiconductorchip according to a nineteenth embodiment;

FIG. 39 is a view illustrating the configuration of a semiconductordevice according to a twentieth embodiment;

FIG. 40 is a view illustrating the configuration of a semiconductordevice according to a twenty-first embodiment;

FIGS. 41A and 41B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to a twenty-secondembodiment;

FIG. 42 is a cross-sectional view illustrating a method of manufacturinga semiconductor device according to a twenty-second embodiment;

FIG. 43A is a plan view illustrating the configuration of asemiconductor device according to a twenty-third embodiment, and FIG.43B is a rear view of the semiconductor device;

FIGS. 44A to 44C are views illustrating a modified example of FIG. 43B;

FIGS. 45A to 45D are views illustrating a modified example of FIG. 43B;

FIG. 46A is a plan view illustrating the configuration of asemiconductor device according to a twenty-fourth embodiment, and FIG.46B is a rear view of the semiconductor device;

FIGS. 47A to 47D are views illustrating a modified example of FIG. 46B;

FIGS. 48A and 48B are views illustrating the configuration of asemiconductor device according to a twenty-fifth embodiment; and

FIG. 49 is a functional block diagram of an electronic apparatus havinga semiconductor chip according to a twenty-sixth embodiment.

DETAILED DESCRIPTION

The invention will be now described herein with reference toillustrative embodiments. Those skilled in the art will recognize thatmany alternative embodiments can be accomplished using the teachings ofthe present invention and that the invention is not limited to theembodiments illustrated for explanatory purposes.

Hereinafter, embodiments of the invention will be described usingdrawings. In the drawings, the same reference numerals are used for thesame constituent elements, and the description thereof will not berepeated.

First Embodiment

FIG. 1 is a cross-sectional view illustrating the configuration of asemiconductor device according to a first embodiment. This semiconductordevice includes an interconnect substrate 200, a semiconductor chip 100,a first inductor 112, a second inductor 122, a sealing resin 400, and agroove 500. A semiconductor chip 100 is mounted on a first surface ofthe interconnect substrate 200, and has a multilayer interconnect layer106 (illustrated in FIG. 2). The first inductor 112 is formed in themultilayer interconnect layer 106, and the wiring axis direction of thefirst inductor 112 is directed in a horizontal direction to theinterconnect substrate 200. The second inductor 122 is formed in themultilayer interconnect layer 106, and the wiring axis direction of thesecond inductor 122 is directed in the horizontal direction to theinterconnect substrate 200. The second inductor 122 faces the firstinductor 112. The sealing resin 400 seals the semiconductor chip 100 andat least a first surface of the interconnect substrate 200. The groove500 is formed over the whole area of at least a portion, which ispositioned between the first inductor 112 and the second inductor 122,of a boundary surface between the sealing resin 400 and the multilayerinterconnect layer 106. Hereinafter, this will be described in detail.

A surface of the semiconductor chip 100, on which the multilayerinterconnect layer 106 is formed, that is, an active surface, isdirected opposite to the interconnect substrate 200. The semiconductorchip 100 is connected to the interconnect substrate 200 through abonding wire 300. The sealing resin 400 seals the first surface of theinterconnect substrate 200, the bonding wire 300, and the wholesemiconductor chip 100. Further, the groove 500 is formed over a rangefrom an upper surface of the sealing resin 400 to the multilayerinterconnect layer 106 of the semiconductor chip 100. The groove 500does not penetrate the semiconductor chip 100. It is preferable that thegroove 500 penetrates, in the multilayer interconnect layer 106 of thesemiconductor chip 100, a layer in which at least the first inductor 112and the second inductor 122 are formed. More preferably, the groove 500penetrates the whole multilayer interconnect layer 106. In thisembodiment, the first inductor 112 and the second inductor 122 areformed on the same layer.

The first inductor 112 is formed in a first circuit area 110 of thesemiconductor chip 100, and the second inductor 122 is formed in asecond circuit area 120 of the semiconductor chip 100. The number ofwindings and the winding direction of the first inductor 112 may beequal to or may be different from those of the second inductor 122. Thefirst circuit area 110 has an oscillation circuit, and the secondcircuit area 120 has a reception circuit. The oscillation circuit isconnected to the first inductor 112, and the reception circuit isconnected to the second inductor 122. The first circuit area 110(including the first inductor 112) is inputted a different referenceelectric potential from that of the second circuit area 120 (includingthe second inductor 122) when they are driven. The difference inreference electric potential between the first circuit area 110 and thesecond circuit area 120 is, for example, equal to or more than 100V. Forexample, the reference electric potential of the first circuit area 110is about 3V, and the electric potential of the second circuit area 120is about 800V. Further, the circuit formed in the first circuit area 110and the circuit formed in the second circuit area 120 may transmit andreceive signals through the first inductor 112 and the second inductor122.

FIG. 2 is an enlarged cross-section view illustrating the configurationof the semiconductor chip 100. The semiconductor chip 100 has an elementlayer 104, on which elements are formed, provided on the substrate 102such as a silicon substrate. The elements provided on the element layer104 are, for example, transistors. The multilayer interconnect layer 106is formed on the element layer 104. The uppermost layer of themultilayer interconnect layer 106 is a passivation film 108. The firstinductor 112 and the second inductor 122 are connected to the element ofthe element layer 104. In this embodiment, the first inductor 112 andthe second inductor 122 are formed by using the whole interconnect layerthat is formed in the multilayer interconnect layer 106.

FIG. 3A is a cross-sectional view taken along line A-A′ in FIG. 2. Asillustrated in this drawing and FIG. 2, the first inductor 112 and thesecond inductor 122 are three-dimensionally formed, and have a spiralshape. In an example illustrated in FIG. 2, the first inductor 112 andthe second inductor 122 have quadruple spirals. The planar shapes ofrespective loops that constitute the spirals are equal to each other.

FIG. 3B is a cross-section view illustrating a modified example of theshapes of the first inductor 112 and the second inductor 122. In anexample illustrated in this drawing, the first inductor 112 and thesecond inductor 122 are two-dimensionally formed except for a portionthat is connected to the element of the element layer 104. That is, inan example illustrated in this drawing, the main body portions of thefirst inductor 112 and the second inductor 122 are stretched to form thespiral within the same surface.

FIGS. 4A and 4B are schematic plan views illustrating widths of thefirst inductor 112 and the second inductor 122. The first inductor 112and the second inductor 122, as seen in the width direction of thesemiconductor chip 100, may be formed on a portion of the semiconductorchip 100 as illustrated in FIG. 4A or may be formed on the wholesemiconductor chip 100 except for ends of the semiconductor chip 100 asillustrate in FIG. 4B. However, even in the case of a structureillustrated in FIG. 4B, the first inductor 112 and the second inductor122 are positioned inside a guard ring (not illustrated) in the widthdirection (upward and downward directions in the drawing) of thesemiconductor chip 100. In this case, a guard ring and a interconnectare formed neither between the first inductor 112 and the groove 500 norbetween the second inductor 122 and the groove 500.

FIGS. 5A and 5B and 6A and 6B are cross-sectional views illustrating amethod of manufacturing a semiconductor device illustrated in FIG. 1.First, as illustrated in FIG. 5A, the semiconductor chip 100 isprepared. In this stage, the semiconductor chip 100 has the firstinductor 112 and the second inductor 122. The semiconductor chip 100 isprepared as follows. First, an element isolation region is formed on asemiconductor substrate such as a silicon wafer. Then, a gate insulatinglayer and a gate electrode are formed on the semiconductor substrate.Then, an extension area is formed on the semiconductor substrate, and aside wall is further formed on a side wall of the gate electrode. Then,a source and a drain are formed on the semiconductor substrate.Accordingly, a transistor is formed on the semiconductor substrate.Then, the multilayer interconnect layer 106 is formed on thesemiconductor substrate and the transistor. Thereafter, as necessary,the semiconductor substrate is separated into individual semiconductorchips 100.

Then, the semiconductor chip 100 is mounted on the interconnectsubstrate 200 by using, for example, paste, nonconductive adhesive, orDie Attach Film (DAF) (not illustrated). At this time, the activesurface of the semiconductor chip 100 is directed opposite to theinterconnect substrate 200.

Then, as illustrated in FIG. 5B, the semiconductor chip 100 and theinterconnect substrate 200 are connected together using a bonding wire300.

Then, as illustrated in FIG. 6A, the first surface of the interconnectsubstrate 200, the bonding wire 300, and the semiconductor chip 100 aresealed using the sealing resin 400. The sealing resin 400 is also formedon the multilayer interconnect layer 106 of the semiconductor chip 100.The sealing resin is formed using a mold (not illustrated), and theupper surface of the sealing resin 400 is evenly formed.

Then, as illustrated in FIG. 6B, using a dicing blade 510, the groove500 is formed from the upper surface of the sealing resin 400 toward themultilayer interconnect layer 106. In this case, the method of formingthe groove 500 is not limited to the method using the dicing blade 510.

FIG. 7 is a cross-sectional view of an electric device using asemiconductor device illustrated in FIG. 1. The electronic apparatus hasa structure in which the semiconductor device illustrated in FIG. 1 ismounted on a mount substrate 600. On a surface that is opposite to thefirst surface of the interconnect substrate 200, soldering balls 620 areinstalled as external connection terminals. The semiconductor device isfixed to the mount substrate 600 through the soldering balls 620. Themount substrate 600 is, for example, a printed substrate.

Next, the operation and effect of this embodiment will be described. Inthis embodiment, the first inductor 112 and the second inductor 122 aremounted on the same semiconductor chip 100. Accordingly, themanufacturing cost of the semiconductor device can be lowered.

On the boundary surface between the sealing resin 400 and the multilayerinterconnect layer 106 (that is, the surface of the multilayerinterconnect layer 106), the groove 500 is formed. The groove 500 isformed on the whole area of at least a portion that is positionedbetween the first inductor 112 and the second inductor 122. Thisresults, even if a metal material that forms the first inductor 112 andthe second inductor 122 causes migration through a peeling portionoccurred on the boundary surface between the sealing resin 400 and themultilayer interconnect layer 106, the movement distance for the metalmaterial that is required for electrically connecting the first inductor112 to the second inductor 122 increases, in comparison to a case wherethe groove 500 is not formed. This allows preventing the insulationbetween the first inductor 112 and the second inductor 122 from beingunable to be secured due to the migration of the metal material thatforms the first inductor 112 and the second inductor 122.

The first inductor 112 and the second inductor 122 are formed on thesame interconnect layer. This allows preventing deviating the center ofthe winding axis of the first inductor 112 from that of the secondinductor 122 in comparison to the case where the first inductor 112 andthe second inductor 122 are formed on the respective differentsemiconductor chips. Accordingly, the first inductor 112 and the secondinductor 122 have a high signal transfer efficiency between them.Further, the groove 500 is formed after the semiconductor chip 100, inwhich the first inductor 112 and the second inductor 122 are formed onthe same layer, is mounted on the interconnect substrate 200. Thisallows preventing deviating the center of the winding axis of the firstinductor 112 from that of the second inductor 122 regardless of theexistence/nonexistence of the variation of the thickness of a layer thatfixes the semiconductor chip 100 to the interconnect substrate 200 suchas Ag paste and the variation of the thickness of the chip. Accordingly,the first inductor 112 and the second inductor 122 have a high signaltransfer efficiency between them.

A interconnect is formed neither between the first inductor 112 and thegroove 500 nor between the second inductor 122 and the groove 500. Thisallows improving a signal transfer efficiency between the first inductor112 and the second inductor 122 in comparison to a case where ainterconnect is formed between them.

The groove 500 may be formed using the dicing blade 510 in order toreduce the cost for forming the groove 500.

In this embodiment, the groove 500 may have a two-stage structureincluding a first groove and a second groove having a narrower widththan the first groove and formed on the bottom surface of the firstgroove. The groove between the inductors may be formed as the secondgroove having the narrow width in order to reduce the distance betweenthe inductors. The groove 500 or at least one of the first and secondgrooves may be formed by laser. As illustrated in FIG. 8, timing forforming the groove 500 may be after mounting the semiconductor device onthe mount substrate 600.

The timing for forming the groove 500 may be before resin sealing. Sincethe semiconductor chip 100 is mounted on (fixed to) the interconnectsubstrate 200, it is possible, even if the timing for forming the groove500 is before the resin sealing, to maintain the accuracy of therelative positions between the first inductor 112 and the secondinductor 122 in a state where the both inductors are formed in thesemiconductor chip 100, unless the interconnect substrate 200 iscompletely separated by the groove 500. Before the resin sealing, forexample, the position for forming the groove 500 can be determined basedon a pattern formed on the external shape of the semiconductor chip 100or on the surface of the semiconductor chip 100. Thus, the groove 500can be formed at high accuracy. In these cases, the sealing resin 400may be filled in the groove 500.

If the groove 500 is formed so that the substrate 102 of thesemiconductor chip 100 is not completely separate by the groove 500, thegroove 500 may be formed before the semiconductor chip 100 is mounted onthe interconnect substrate 200. In this case, it may be considered thatthe groove 500 is formed in the dicing from the wafer that cuts andcarries off respective semiconductor chips 100 including both the firstinductor 112 and the second inductor 122.

Second Embodiment

FIG. 9 is a cross-sectional view illustrating the configuration of anelectronic apparatus according to a second embodiment, and correspondsto FIG. 7 in the first embodiment. The electronic apparatus according tothis embodiment has the same configuration as the electronic apparatusaccording to the first embodiment except for the point that a sealinglayer 501 is formed on a side surface of the groove 500.

The sealing layer 501, for example, may be made of resin such as epoxy,polyimide, silicon, acrylic resin, or urethane, and suppressespenetration of moisture or the like into the inside of the semiconductorchip 100 from the side surface of the groove 500.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, since the sealing layer 501 is formed on the sidesurface of the groove 500, the electronic apparatus can prevent itsdurability from deteriorating from the side surface of the groove 500.In this case, the sealing layer 501 may be formed in respectiveembodiments to be described later.

Third Embodiment

FIG. 10 is a cross-sectional view illustrating the configuration of anelectronic apparatus according to a third embodiment, and corresponds toFIG. 7 in the first embodiment. The electronic apparatus according tothis embodiment has the same configuration as the electronic apparatusaccording to the first embodiment except for the point that the groove500 penetrates the semiconductor chip 100. The bottom surface of thegroove 500 may enter into the interconnect substrate 200.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, since the groove 500 penetrates the semiconductorchip 100, the groove 500 can surely penetrate the boundary surfacebetween the multilayer interconnect layer 106 and the sealing resin 400even if manufacturing tolerance occurs. Since the first circuit area 110and the second circuit area 120 of the semiconductor chip 100 areseparated as well as the substrate 102 from each other, much higherinsulation withstanding voltage can be obtained. Also, the first circuitarea 110 and the second circuit area 120 can prevent noise frompropagating from one side to the other side through the substrate 102.

Fourth Embodiment

FIG. 11 is a cross-sectional view illustrating the configuration of anelectronic apparatus according to a fourth embodiment, and correspondsto FIG. 7 in the first embodiment. The electronic apparatus according tothis embodiment has the same configuration as the electronic apparatusaccording to the first embodiment except for the point that the groove500 penetrates the semiconductor chip 100 and the interconnect substrate200 and thus the semiconductor device is divided into two semiconductordevices 410 and 420. The semiconductor device 410 and the semiconductordevice 420, which are formed by dividing one semiconductor device, forma pair, and before they are mounted on the mount substrate 600, they aremanaged as one set of semiconductor devices. The semiconductor devices410 and 420 have a flat upper surface of the sealing resin 400. Thedistance from the upper surface of the sealing resin 400 to the windingaxis of the first inductor 112 in the semiconductor device 410 is equalto the distance from the upper surface of the sealing resin 400 to thewinding axis of the second inductor 122 in the semiconductor device 420.

FIGS. 12A and 12B and 13 are cross-sectional views illustrating anexample of a method of mounting the semiconductor devices 410 and 420 onthe mount substrate 600.

First, as illustrated in FIG. 12A, an adsorption device 700 is prepared.The adsorption surface 702 of the adsorption device 700 is flat. In theadsorption device 700, adsorption nozzles 710 and 720 are installed. Theadsorption nozzles 710 and 720 are open on the adsorption surface 702.

Then, using the adsorption nozzle 710, the adsorption surface 702 of theadsorption device 700 adsorbs the upper surface of the sealing resin 400of the semiconductor device 410.

Then, as illustrated in FIG. 12B, using the adsorption nozzle 720, theadsorption surface 702 of the adsorption device 700 adsorbs the uppersurface of the sealing resin 400 of the semiconductor device 420. Asdescribed above, the distance from the upper surface of the sealingresin 400 to the winding axis of the first inductor 112 in thesemiconductor device 410 is equal to the distance from the upper surfaceof the sealing resin 400 to the winding axis of the second inductor 122in the semiconductor device 420. The adsorption surface 702 of theadsorption device 700 is flat. Thus, in a state as illustrated in FIG.12B, the first inductor 112 faces the second inductor 122.

Then, as illustrated in FIG. 13, by moving the adsorption device 700,the semiconductor devices 410 and 420 are arranged on the mountsubstrate 600. Then, by heating soldering balls 620 and then cooling thesoldering balls 620, the semiconductor devices 410 and 420 are mountedon the mount substrate 600. Thereafter, the semiconductor devices 410and 420 are open from the adsorption device 700. At this time, if theadsorption device 700 has a heating mechanism and a cooling mechanism,the heating and cooling of the soldering balls 620 are performed by theadsorption device 700.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, one set of the semiconductor devices 410 and 420,which form a pair, is formed by dividing one semiconductor device. Thisallows reducing the manufacturing cost of the semiconductor devices 410and 420.

The semiconductor devices 410 and 420 are formed by dividing onesemiconductor device 400, and the first inductor 112 and the secondinductor 122 are formed on the same layer. Thus, the distance from theupper surface of the sealing resin 400 to the winding axis of the firstinductor 112 in the semiconductor device 410 is equal to the distancefrom the upper surface of the sealing resin 400 to the winding axis ofthe second inductor 122 in the semiconductor device 420. Since, in thisembodiment, the flat surface that is a reference such as the adsorptionsurface 702 of the adsorption device 700 is made to adsorb the uppersurface of the sealing resin 400 of the semiconductor device 410 and theupper surface of the sealing resin 400 of the semiconductor device 420,the first inductor 112 can easily face the second inductor 122. Thus,efforts required when determining the relative positions of thesemiconductor devices 410 and 420 can be reduced in mounting thesemiconductor devices 410 and 420 on the mount substrate 600. Further,one semiconductor device 400 may be separated into two semiconductordevices 410 and 420 after the semiconductor device 400 is mounted on themount substrate 600. In this embodiment, since even the interconnectsubstrate 200 is separated between the semiconductor device 410 and thesemiconductor device 420, the interconnect substrate 200 can improve itsinternal insulation reliability.

Fifth Embodiment

FIGS. 14A and 14B are schematic plan views of a semiconductor deviceaccording to a fifth embodiment, and correspond to FIGS. 4A and 4Baccording to the first embodiment. The semiconductor device according tothis embodiment has the same configuration as the semiconductor deviceaccording to the first embodiment except for the point that magneticshielding layers 114 and 124 are provided. The magnetic shielding layers114 and 124, for example, are formed by laminating a conductor layerthat forms the interconnect layer, and their length is longer than thelength of the first and second inductors 112 and 122. The magneticshielding layer 114 is formed in such a position as to shield the firstinductor 112 from other circuits of the first circuit area 110, and themagnetic shielding layer 124 is formed in such a position as to shieldthe second inductor 122 from other circuits of the second circuit area120. To the magnetic shielding layers 114 and 124, a constant electricpotential, for example, a ground potential or a power supply potential,is given.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, the magnetic shielding layers 114 and 124 prevent themagnetic fields generated from the first inductor 112 and the secondinductor 122 exerting an influence on the operation of other circuits ofthe first circuit area 110 and the second circuit area 120.

Sixth Embodiment

FIGS. 15A and 15B are schematic cross-sectional views of a semiconductordevice according to a sixth embodiment. The semiconductor deviceaccording to this embodiment has the same configuration as thesemiconductor device according to the first embodiment or the thirdembodiment except for the point that the resin layer 520 is filled inthe groove 500. The resin layer 520, for example, may be made of resinsuch as epoxy, polyimide, silicon, or urethane. However, in the casewhere the resin layer 520 is made of epoxy, it is preferable that theresin layer 520 has a lower content rate of the filler than the sealingresin 400. Here, the content rate of the filler, for example, is definedby an area that is occupied by the filler on the cross-section. By usingthe semiconductor device, as illustrated in FIGS. 16A and 16B, the sameelectronic apparatus as the first embodiment can be formed.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, the resin layer 520 thus filled in the groove 500 canprevent the durability (for example, moisture resistance) of thesemiconductor device from deteriorating due to the forming of the groove500. In the case where the resin layer 520 is made of epoxy resin andthe resin layer 520 has a lower content rate of the filler than thesealing resin 400, void occurrence can be suppressed even if the widthof the groove 500 is narrow (for example, equal to or less than 30 μm).This allows preventing the boundary surface of the multilayerinterconnect layer 106 in the first circuit area 110 from connecting,through the void inside the resin layer 520, to the boundary surface ofthe multilayer interconnect layer 106 in the second circuit area 120.Thus, the semiconductor device can prevent its durability (for example,moisture resistance) from deteriorating.

Seventh Embodiment

FIGS. 17A and 17B are schematic cross-sectional views of a semiconductordevice according to a seventh embodiment. The semiconductor deviceaccording to this embodiment has the same configuration as thesemiconductor device according to the sixth embodiment except for thepoint that a magnetic permeable member 522 is installed inside the resinlayer 520. The magnetic permeable member 522, for example, is formed ofa material having high magnetic permeability, such as iron, and isarranged on a straight line that connects the winding axes of the firstinductor 112 and the second inductor 122. By using the semiconductordevices, as illustrated in FIGS. 18A and 18B, the same electronicapparatus as the first embodiment can be formed.

Even in this embodiment, the same effect as the sixth embodiment can beobtained. Further, since the magnetic permeable member 522 is arrangedbetween the first inductor 112 and the second inductor 122, the firstinductor 112 and the second inductor 122 can obtain a high couplingcoefficient between them.

Eighth Embodiment

FIGS. 19A and 19B and 20A and 20B are cross-sectional views illustratinga method of manufacturing a semiconductor device according to an eighthembodiment. First, as illustrated in FIG. 19A, the semiconductor chip100 is mounted on the interconnect substrate 200. On the semiconductorchip 100 an inductor 130 is formed rather than the first inductor 112and the second inductor 122. The inductor 130, as illustrated in FIG.19B, is provided with two interconnects 132 and 134 and a plurality ofinterconnects 136 of a loop type which are connected to theinterconnects 132 and 134. The plurality of interconnects 136 are formedin parallel with each other, and one end of each interconnect isconnected to the interconnect 132, while the other end thereof isconnected to the interconnect 134. One end of the two interconnects 132and 134 is connected to an oscillation circuit installed in the firstcircuit area 110, while the other end thereof is connected to areception circuit installed in the second circuit area 120.

Then, the bonding wire 300 and the sealing resin 400 are formed. Themethod of forming them is the same as that according to the firstembodiment.

Then, as illustrated in FIG. 20A, the groove 500 is formed using thedicing blade 510. The groove 500 penetrates the interconnect layer inwhich the inductor 130 is formed. Thus, the inductor 130 is divided intothe first inductor 112 and the second inductor 122 through the groove500.

The subsequent process is equal to that according to the firstembodiment.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, if an error occurs in the position for forming thegroove 500 through the dicing blade 510 in the case where the firstinductor 112 and the second inductor 122 are pre-formed as in the firstembodiment, the position for forming the groove 500 overlaps the firstinductor 112 or the second inductor 122, and there is some possibilitythat the first inductor 112 or the second inductor 122 is removed.According to this embodiment, by dividing the inductor 130 through thedicing blade 510, the first inductor 112 and the second inductor 122 areformed. Thus, the first inductor 112 and the second inductor 122 canremain surely.

Ninth Embodiment

FIGS. 21A and 21B and 22 are cross-sectional views illustrating a methodof manufacturing a semiconductor device according to a ninth embodiment.First, as illustrated in FIG. 21A, the semiconductor chip 100 is mountedon the interconnect substrate 200. At this time, the active surface ofthe semiconductor chip 100 is directed opposite to the interconnectsubstrate 200. Then, the semiconductor chip 100 and the interconnectsubstrate 200 are connected together using the bonding wire 300. Then,the first surface of the interconnect substrate 200, the bonding wire300, and the semiconductor chip 100 are sealed using the sealing resin400. At this time, a heat sink 150 is buried in the sealing resin 400.The heat sink 150, as seen from the plane, overlaps the semiconductorchip 100, and one surface thereof is exposed from the upper surface ofthe sealing resin 400. The one surface of the heat sink 150 and theupper surface of the sealing resin 400 form the same plane.

Then, as illustrated in FIG. 21B, the groove 500 is formed from theupper surface of the heat sink 150 toward the multilayer interconnectlayer 106 using the dicing blade 510. That is, in this embodiment, thegroove 500 penetrates the heat sink 150 and the sealing resin 400.

Then, using the semiconductor device on which the groove 500 is formed,as illustrated in FIG. 22, the same electronic apparatus as the firstembodiment can be formed.

In this case, as illustrated in the respective drawings 23A and 23B, thegroove 500 may penetrate the semiconductor chip 100 (FIG. 23A), or maypenetrate the semiconductor chip 100 and the interconnect substrate 200(FIG. 23B). The resin layer may be filled in the groove 500 including aportion that is positioned on the same layer as the heat sink 150.

Even in this embodiment, the same effect as the first embodiment can beobtained.

Tenth Embodiment

FIG. 24 is a cross-sectional view illustrating the configuration of asemiconductor device according to a tenth embodiment. The semiconductordevice according to this embodiment has the same configuration as thesemiconductor device according to the ninth embodiment except for theposition of the groove 500.

In this embodiment, the groove 500 is formed from the bottom surface ofthe interconnect substrate 200 and penetrates the interconnect substrate200 and the semiconductor chip 100 using the dicing blade 510. However,the groove 500 does not penetrate the heat sink 150.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, although the semiconductor device is divided into twosemiconductor devices except for the heat sink 150, the two dividedsemiconductor devices are bonded into one body in the heat sink 150.Thus, when mounting the semiconductor device on the mount substrate 600,the position alignment in the height direction of the two semiconductordevices becomes unnecessary, thus suppressing the increase of effortswhen mounting the semiconductor device.

Eleventh Embodiment

FIG. 25 is a cross-sectional view illustrating the configuration of asemiconductor device according to an eleventh embodiment. Thesemiconductor device according to this embodiment has the sameconfiguration as the semiconductor device according to the firstembodiment except for the following point.

First, the semiconductor chip 100 is flip-chip-mounted on the firstsurface of the interconnect substrate 200. A space between the activesurface of the semiconductor chip 100 and the first surface of theinterconnect substrate 200 is sealed by the sealing resin (under-fillresin) 402. Further, the groove 500 is formed from the rear surface sideof the semiconductor chip 100 toward the sealing resin 402.

In an example illustrated in FIG. 25, the groove 500 penetrates thesemiconductor chip 100, but does not penetrate the sealing resin 402.However, as illustrated in FIGS. 26A and 26B, the groove 500 maypenetrate the semiconductor chip 100 and the sealing resin 402, or maypenetrate the semiconductor chip 100, the sealing resin 402, and theinterconnect substrate 200.

Even in this embodiment, the same effect as the first embodiment can beobtained.

Twelfth Embodiment

FIGS. 27 and 28A and 28B are cross-sectional views illustrating theconfiguration of a semiconductor device according to a twelfthembodiment. The semiconductor device according to this embodiment hasthe same configuration as the semiconductor device according to theeleventh embodiment except for the following point.

First, to the rear surface of the semiconductor chip 100, the heat sink150 is attached. Further, the groove 500 penetrates at least the heatsink 150 and the semiconductor chip 100.

Even in this embodiment, the same effect as the eleventh embodiment canbe obtained.

Thirteenth Embodiment

FIG. 29 is a cross-sectional view illustrating the configuration of asemiconductor device according to a thirteenth embodiment. Thesemiconductor device according to this embodiment has the sameconfiguration as the semiconductor device according to the twelfthembodiment except for the position of the groove 500.

In this embodiment, the groove 500 is formed from the bottom surface ofthe interconnect substrate 200 and penetrates the interconnect substrate200, the sealing resin 402, and the semiconductor chip 100 using thedicing blade 510. However, the groove 500 does not penetrate the heatsink 150.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, although the semiconductor device is divided into twosemiconductor devices except for the heat sink 150, the two dividedsemiconductor devices are bonded into one body in the heat sink 150.Thus, when mounting the semiconductor device on the mount substrate 600,the position alignment in the height direction of the two semiconductordevices becomes unnecessary, thus suppressing the increase of effortswhen mounting the semiconductor device.

Fourteenth Embodiment

FIGS. 30A to 30C are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to a fourteenthembodiment. In this embodiment, the semiconductor chip 100 is mounted ona lead frame 220.

First, as illustrated in FIG. 30A, the semiconductor chip 100 is mountedon a die pad 222 of the lead frame 220, and the semiconductor chip 100and a lead 224 of the lead frame 220 are connected together using thebonding wire 300.

Then, the lead frame 220 and the semiconductor chip 100 are sealed usingthe sealing resin 400. In this process, the upper surface of the sealingresin 400 is formed flat.

Then, as illustrated in FIG. 30B, the groove 500 is formed from theupper surface of the sealing resin 400 toward the semiconductor chip 100using the dicing blade 510. In this embodiment, the groove 500 does notpenetrate the semiconductor chip 100.

Then, as illustrated in FIG. 30C, the sealing resin 400 and the leadframe 220 are separated into individual semiconductor chips 100 usingthe dicing blade 510. In this case, the process as illustrated in FIG.30B and the process as illustrated in FIG. 30C may be simultaneouslyperformed. In this case, the forming of the groove 500 and the cuttingfor the division are alternately performed while the dicing blade 510 ismoved in one direction from the right side to the left side in thedrawing. Here, a dual dicer (a device having two or more dicing blades)may be used.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further in an example illustrated in FIGS. 30A to 30C, a QuadFlat No-lead (QFN) type is exemplified as the lead frame 220. However,the lead frame 200 may be a Quad Flat Package (QFP) or a Small OutlinePackage (SOP). Further, the groove 500 may be formed after thesemiconductor chip 100 is mounted on the die pad 222, and thesemiconductor chip 100 may be sealed by the sealing resin 400 after theresin layer 520 is filled in the groove 500.

Fifteenth Embodiment

FIGS. 31A and 31B and 32 are cross-sectional views illustrating a methodof manufacturing a semiconductor device according to a fifteenthembodiment. The method of manufacturing the semiconductor deviceaccording to this embodiment is equal to the method of manufacturing thesemiconductor device according to the first embodiment except for thepoint that a first groove 502 and a second groove 504 are formed insteadof the groove 500.

First, as illustrated in FIG. 31A, the semiconductor chip 100 is mountedon the interconnect substrate 200. Then, the semiconductor chip 100 andthe interconnect substrate 200 are connected together using the bondingwire 300. Then, the first surface of the interconnect substrate 200, thebonding wire 300, and the semiconductor chip 100 are sealed using thesealing resin 400.

Then, the first groove 502 is formed on a portion of the sealing resin400 that is positioned between the first inductor 112 and the secondinductor 122 using the dicing blade 510. In this case, the bottomsurface of the first groove 502 is made not to reach the semiconductorchip 100.

Then, as illustrated in FIG. 31B, the second groove 504 is formed on thebottom portion of the first groove 502 using the dicing blade 512. Thedicing blade 512 is thinner than the dicing blade 510. Here, the bottomportion of the second groove 504 is positioned below at least the layerof the semiconductor chip 100, in which the first inductor 112 and thesecond inductor 122 are formed.

Thus, the semiconductor as illustrated in FIG. 32 is formed. In thissemiconductor device, the second groove 504 is formed between the firstinductor 112 and the second inductor 122. The width of the second groove504 is smaller than the width of the first groove 502.

At this time, the timing for forming the first groove 502 and the secondgroove 504, for example, is before the semiconductor device having thesemiconductor chip 100, the interconnect substrate 200 and the sealingresin 400 is separated. That is, the above-described process isperformed after a plurality of semiconductor chips 100 are mounted onthe interconnect substrate 200 and the plurality of semiconductor chips100 are collectively sealed by the sealing resin 400.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, the width of the second groove 504 positioned betweenthe first inductor 112 and the second inductor 122 is narrow. Thisallows the first inductor 112 and the second inductor 122 to be close toeach other, thus strengthening the bonding of the two inductors.

Sixteenth Embodiment

In FIGS. 33A and 33B and 34, first, as illustrated in FIG. 33A, anelement (not illustrated), the first inductor 112, and the secondinductor 122 are formed on a semiconductor wafer 40. The semiconductorwafer 40 is separated into a plurality of semiconductor chips 100, andthe element, the first inductor 112, and the second inductor 122 areinstalled in each of the semiconductor chips 100.

Then, before the semiconductor wafer 40 is separated into individualsemiconductor chips 100, the groove 500 is formed between the firstinductor 112 and the second inductor 122 using laser dicing.

Then, as illustrated in FIG. 33B, the semiconductor wafer 40 isseparated into the plurality of semiconductor chips 100 using the dicingblade.

Then, as illustrated in FIG. 34, the semiconductor chip 100 is mountedon the interconnect substrate 200. Then, the semiconductor chip 100 andthe interconnect substrate 200 are connected using the bonding wire 300.Then, the first surface of the interconnect substrate 200, the bondingwire 300, and the semiconductor chip 100 are sealed using the sealingresin 400. At this time, the sealing resin 400 is filled in the groove500. The sealing resin 400, for example, is epoxy resin.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, the grove 500 is formed in advance when thesemiconductor chip 100 is formed. This allows improving the positionaccuracy of the groove 500.

Since the laser dicing is used, the width of the groove 500 can bereduced. This allows the first inductor 112 and the second inductor 122to be close to each other, thus strengthening the bonding of the twoinductors.

The sealing resin 400 is filled in the groove 500. This allows improvingthe bonding strength of the first inductor 112 and the second inductor122, in comparison to the case where the sealing resin 400 is notinstalled in the groove 500.

Seventeenth Embodiment

FIG. 35 is a cross-sectional view illustrating the configuration of asemiconductor device according to a seventeenth embodiment. Thesemiconductor device according to this embodiment has the sameconfiguration as the semiconductor device according to the sixteenthembodiment except for the point that a resin 508 is buried in the groove500.

The resin 508 is a different material from the sealing resin 400, andhas a different magnetic permeability from the sealing resin 400. Forexample, the resin 508 may be any one of SiO₂, SiN, SiON, MSQ, and HSQ.

The method of manufacturing the semiconductor device according to thisembodiment is the same as the semiconductor device according to thesixteenth embodiment except for the point that the resin 508 is buriedin the groove 500 before the sealing resin 400 is formed after thegroove 500 is formed.

Even in this embodiment, the same effect as the sixteenth embodiment canbe obtained. Further, the resin 508 has a high degree of freedom inselecting the material against the sealing resin 400. This allows thebonding strength of the first inductor 112 and the second inductor 122to be higher rather than that according to the sixteenth embodiment.

In this embodiment, before the semiconductor wafer 40 is separated intothe plurality of semiconductor chip 100, the resin 508 may be filled inthe groove 500. This can result in preventing foreign substances such assawdust from entering into the groove 500 when the semiconductor wafer40 is separated into the semiconductor chips 100.

Eighteenth Embodiment

FIGS. 36A and 36B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device according to an eighteenthembodiment. The method of manufacturing the semiconductor deviceaccording to this embodiment is equal to the semiconductor deviceaccording to the first embodiment except for the timing for forming thegroove 500 and a method of forming the groove 500.

In this embodiment, the groove 500 is formed by a process of forming theelement layer 104, the multilayer interconnect layer 106, and thepassivation film 108 on the semiconductor wafer 40, that is, apre-process.

Specifically, as illustrated in FIG. 36A, a plurality of transistors areformed on the semiconductor wafer 40. Then, the multilayer interconnectlayer 106 is formed on the transistors and the semiconductor wafer 40.In this case, the first inductor 112 and the second inductor 122 areformed on the multilayer interconnect layer 106. Then, the passivationfilm 108 is formed on the multilayer interconnect layer 106.

Then, as illustrated in FIG. 36B, a mask pattern (not illustrated) isformed on the passivation film 108 and the multilayer interconnect layer106. Then, the passivation film 108 and the multilayer interconnectlayer 106 are etched using the mask pattern as a mask. Here, it ispreferable that the etching is an anisotropic etching. Thus, the groove500 is formed on the passivation layer 108 and the multilayerinterconnect layer 106.

At this time, as illustrated in FIG. 37A, the bottom portion of thegrove 500 may enter into the semiconductor wafer 40. Further, asillustrated in FIG. 37B, at least the side surface of the groove 500 maybe covered by an insulating film 506. The insulating film 506, forexample, may be made of SiO₂, SiN, and SiON. The insulating film 506,for example, is formed by performing a CVD method or an ALD method afterthe groove 500 is formed. In this case, the insulating film 506 isformed on the bottom surface of the groove 500 and the passivation film108. By forming the insulating film 506, moisture or the like does notpenetrating from the side surface of the groove 500 into the inside ofthe multilayer interconnect layer 106.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, since the groove 500 is formed by etching, the widthof the groove 500 can be reduced. This allows the first inductor 112 andthe second inductor 122 to be close to each other, thus strengtheningthe bonding of the two inductors. The anisotropic etching may be used asthe etching when forming the groove 500, in order to further reduce thewidth of the groove 500.

Nineteenth Embodiment

FIG. 38 is a plan view illustrating the configuration of a semiconductorchip 100 according to a nineteenth embodiment. The semiconductor chip100 according to this embodiment is the same as any one of sixteenthembodiment to eighteenth embodiment except for the point that the groove500 is formed only between the first inductor 112 and the secondinductor 122, and does not extend up to the edge of the semiconductorchip 100.

Even in this embodiment, the same effect as any one of the sixteenth toeighteenth embodiments can be obtained. Further, since the groove 500 isformed only between the first inductor 112 and the second inductor 122,the strength of the semiconductor device can be increased.

In this embodiment, the groove 500 may be formed by etching (forexample, anisotropic etching), in order to improve accuracy of lengthand position for the groove 500. This can result in reducing the marginbetween the groove 500 and the circuit area (in the case of an elementsuch as a transistor or the like, an area in which a interconnect isformed) that is positioned around the groove 500, thus increasing thecircuit area. Accordingly, the layout limitations when designing thesemiconductor chip 100 can be reduced.

Twentieth Embodiment

FIG. 39 is a view illustrating the configuration of a semiconductordevice according to a twentieth embodiment. In this embodiment, thesemiconductor chip 100 has a polyimide film 109 formed on thepassivation film 108. The polyimide film 109 has an opening on anelectrode pad (not illustrated) installed on the multilayer interconnectlayer 106.

The semiconductor chip 100 is fixed to the interconnect substrate 200through a fixing layer 800. The fixing layer 800 may be made of silverpaste or DAF.

The groove 500 is installed in an area in which an opening is not formedon the polyimide film 109. The bottom surface of the groove 500 entersinto the interconnect substrate 200. In this case, the groove 500, forexample, is formed using the dicing blade 510.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, the dicing blade 510 forms the groove 500 on aportion of the polyimide film 109 on which the opening is not formed.This can result in preventing a defect from entering into the multilayerinterconnect layer 106 when the groove 500 is formed. This allowspreventing the interconnect in the multilayer interconnect layer 106from being short-circuited.

Twenty-First Embodiment

FIG. 40 is a view illustrating the configuration of a semiconductordevice according to a twenty-first embodiment. The semiconductor deviceaccording to this embodiment has the same configuration as thesemiconductor device according to the twentieth embodiment except forthe point that a portion of the polyimide film 109 on which the groove500 is formed has an opening.

Even in this embodiment, the same effect as the first embodiment can beobtained. Further, since it is not necessary for the dicing blade 510 tocut the polyimide film 109 when the groove 500 is formed, the polyimidefilm 109 can prevent its cutting waste from entering into the groove500.

Position of the grove 500 can be performed based on the opening of thepolyimide film 109 when the groove 500 is formed. This results inimproving the position accuracy for the groove 500. Further, since theopening of the polyimide film 109 and the groove 500 allow visuallyconfirming whether or not they overlap each other after the groove 500is formed, the position of the groove 500 can be easily inspected.

Twenty-Second Embodiment

FIGS. 41A and 41B and 42 are cross-sectional views illustrating a methodof manufacturing a semiconductor device according to a twenty-secondembodiment. First, as illustrated in FIG. 41A, the semiconductor chip100 is adsorbed on the adsorption surface 702 of the adsorption device700. On the adsorption surface 702 of the adsorption device 700, aconcave portion 704 is formed. The concave portion 704 is positionedbetween the first inductor 112 and the second inductor 122 as seen fromthe plane. In an example illustrated in this drawing, the active surfaceof the semiconductor chip 100 is adsorbed on the adsorption surface 702.However, in the case where the semiconductor chip 100 isflip-chip-mounted on the interconnect substrate 200, the rear surface ofthe semiconductor chip 100 may be adsorbed on the adsorption surface702.

Then, as illustrated in FIG. 41B, for example, the groove 500 is formedon the semiconductor chip 100 using the dicing blade (not illustrated).Since the concave portion 704 is formed on the adsorption surface 702,the dicing blade hardly contacts with the adsorption device 700. In thiscase, the groove 500 penetrates the semiconductor chip 100.

Then, as illustrated in FIG. 42, the semiconductor chip 100 is mountedon the interconnect substrate 200 using the adsorption device 700. Inthis case, the lead frame 220 may be used instead of the interconnectsubstrate 200. Thereafter, the bonding wire 300 and the sealing resin400 are formed.

At this time, in a state as illustrated in FIG. 41A, DAF may beinstalled on the rear surface of the semiconductor chip 100. Thisallows, in the case where the semiconductor chip 100 is divided into twoby the groove 500, preventing changing heights of the two divided pieceseach other when the semiconductor chip 100 is mounted on theinterconnect substrate 200.

Even in this embodiment, the same effect as the first embodiment can beobtained. Even when the semiconductor chip 100 is divided into twopieces, the two pieces can prevent changing their heights each other.This allows preventing weakening the bonding of the first inductor 112and the second inductor 122.

In this embodiment, the upper surface of the semiconductor chip 100 maybe fixed to a fixing member (not illustrated) rather than the adsorptiondevice 700. In this case, the groove 500 is formed in a state where thesemiconductor chip 100 is fixed to the fixing member. Thus, thesemiconductor chip 100 fixed to the fixing member is mounted on theinterconnect substrate 200. Even in this case, the semiconductor chip100 can prevent, when it is divided into two pieces, heights of the twopieces from being changed. This allows preventing weakening the bondingof the first inductor 112 and the second inductor 122.

Twenty-Third Embodiment

FIG. 43A is a plan view illustrating the configuration of asemiconductor device according to a twenty-third embodiment. FIG. 43B isa rear view of the semiconductor device. The semiconductor deviceaccording to this embodiment includes the semiconductor chip 100, thebonding wire 300, and the interconnect substrate 200. In thissemiconductor device, soldering balls 620 are shaped in the form of alattice. The semiconductor chip 100 and the interconnect substrate 200are all rectangular, and the sides that are opposite to each other arein parallel to each other. Further, the centers of the semiconductorchip 100 and the interconnect substrate 200 overlap each other. Thegroove 500 passes the centers of the semiconductor chip 100 and theinterconnect substrate 200. As seen from the plane, on a straight line Aon which the groove 500 passes and on lattice points positioned aroundthe straight line, the soldering ball 620 is not formed. Further, aroundthe four corner portions of the interconnect substrate 200, thesoldering balls 620 are arranged.

Thus, the soldering ball 620 that connects to the first circuit area 110may be spaced apart from the soldering ball 620 that connects to thesecond circuit area 120. This allows increasing the withstanding voltagebetween the first circuit area 110 and the second circuit area 120, andalso suppressing the first circuit area 110 and the second circuit area120 from interfering with each other.

The number of soldering balls 620 that are arranged along the side (theside in upward and downward directions in the drawing) that is inparallel to the straight line A of the interconnect substrate 200 islarger than the number of soldering balls 620 that are arranged alongthe side (the side in left and right directions in the drawing) that isperpendicular to the straight line A of the interconnect substrate 200.That is, the soldering balls 620 that are arranged along the side (theside in the left and right directions in the drawing) that is inparallel to the straight line A in the interconnect substrate 200 arenot reduced. This allows preventing reducing the number of solderingballs 620 that can be arranged on the rear surface of the interconnectsubstrate 200.

The soldering balls 620 are arranged in line symmetry based on thestraight line A. In this case, part of the soldering balls 620 may bedummy in order to secure the line symmetry. This allows in, even in thecase where a thermal history is applied to the semiconductor device whenthe groove 500 is formed, providing the reproducibility against thebending of the semiconductor device due to the thermal history. That is,variation hardly occurs in the bending of the semiconductor device.

In this case, the layout of the soldering balls 620 may be as shown inFIGS. 44A to 44C. In these examples, in addition to the example asillustrated in FIG. 43B, part of the soldering balls 620 that arepositioned relatively on the center side of the interconnect substrate200 is reduced. Particularly in examples as illustrated in FIGS. 44A and44B, as seen from the plane, the soldering balls 620 are not arranged ona portion that overlaps the center of the semiconductor chip 100. In anyone of the examples, the soldering balls 620 are arranged in linesymmetry based on the straight line A.

In examples as illustrated in FIGS. 45A to 45D, the regularity of thearrangement of the soldering balls 620 differs in an area that ispositioned below the first circuit area 110 and in an area that ispositioned below the lead frame 220. For example, in an exampleillustrated in FIG. 45A, the soldering balls 620 positioned in one areais different in number and size from the soldering balls 620 positionedin another area. Further, in examples illustrated in FIGS. 45B to 45D,the sizes of the soldering balls 620 are the same, but arrangementdensities differ from one another. In any one of the examples, as seenfrom the respective areas, the soldering balls 620 are arranged in linesymmetry based on the straight line that is in parallel to the straightline A. Also, in examples illustrated in FIGS. 45C and 45D, thesoldering balls 620 are arranged in line symmetry based on theperpendicular bisector of the straight line A.

It is sometimes required to apply different design rules in an area thatcorresponds to the first circuit area 110 and in an area thatcorresponds to the second circuit area 120 of the interconnect substrate200. Even in such a case, according to an example illustrated in FIGS.45A to 45D, since the soldering balls 620 are arrange in line symmetryfor each area, the routing of the interconnects in the respective areasis facilitated.

Twenty-Fourth Embodiment

FIG. 46A is a plan view illustrating the configuration of asemiconductor device according to a twenty-fourth embodiment. FIGS. 46Band 47A to 47D are rear views of the semiconductor device. Thesemiconductor device according to this embodiment is the same as thesemiconductor device according to the twenty-third embodiment except forthe following point.

First, the centers of the semiconductor device 100 and the interconnectsubstrate 200 have missed, and thus the groove 500 has missed from thecenter of the interconnect substrate 200. However, the soldering balls620 are arranged in line symmetry based on the perpendicular bisector ofthe straight line A in the area that corresponds to the first circuitarea 110 and in the area that corresponds to the second circuit area120. Further, in an example illustrated in FIG. 46B, even based on theline that is in parallel to the straight line A, the soldering balls 620are arranged in line symmetry in the area that corresponds to the firstcircuit area 110 and in the area that corresponds to the second circuitarea 120. Because of this, even in the case where it is required toapply different design rules in the area that corresponds to the firstcircuit area 110 and in the area that corresponds to the second circuitarea 120, the routing of the interconnects in the respective areas isfacilitated.

Twenty-Fifth Embodiment

FIG. 48A is a view illustrating the configuration of a semiconductordevice according to a twenty-fifth embodiment. In this embodiment, thesemiconductor chip 100 is slantingly arranged with respect to theinterconnect substrate 200. Further, the groove 500 is arranged on adiagonal line of the interconnect substrate 200.

As illustrated in FIG. 48B, the groove 500 may be in parallel to thediagonal line of the interconnect substrate 200.

In the case of forming the groove 500 after mounting the semiconductorchip 100 on the interconnect substrate 200, this embodiment allowseasily determining the position on which the groove 500 is formed, thatis, the position through which the dicing blade 510 passes. In the caseof mounting the groove 500 on the interconnect substrate 200 afterforming the groove 500 on the semiconductor chip 100, the embodimentallows improving the accuracy of the position for placing thesemiconductor chip 100.

Twenty-Sixth Embodiment

FIG. 49 is a functional block diagram of an electronic apparatus havingthe semiconductor chip 100. The semiconductor chip 100 is mounted on theinterconnect substrate 200 by the structure illustrated in any one ofthe above-described embodiments. In the second circuit area 120 of thesemiconductor chip 100, a power control element 20 is formed. The powercontrol element 20 controls power that is supplied from a power supply10 to a load 30.

The circuit that is positioned in the first circuit area 110 of thesemiconductor chip 100 is a circuit for controlling the power controlelement 20. Here, the generated signal is transferred to the powercontrol element 20 through the first inductor 112 and the secondinductor 122.

As described above, although embodiments of the invention have beendescribed with reference to the drawings, they are exemplary, anddiverse configurations may be adopted in addition to the above-describedconfigurations.

It is apparent that the present invention is not limited to the aboveembodiment, and may be modified and changed without departing from thescope and spirit of the invention.

What is claimed is:
 1. A semiconductor device comprising: aninterconnect substrate; a semiconductor chip mounted over a firstsurface of the interconnect substrate and having a multilayerinterconnect layer; a first inductor formed in the multilayerinterconnect layer, a rotational axis of the first inductor beinghorizontal relative to the interconnect substrate; a second inductorformed in the multilayer interconnect layer and facing the firstinductor, a rotational axis of the second inductor being horizontalrelative to the interconnect substrate; and a groove formed over themultilayer interconnect layer and positioned between the first inductorand the second inductor, wherein when layer numbers of layers in themultilayer interconnect layer are counted from a substrate of thesemiconductor, a layer number of a layer including the first inductorand a layer number of a layer including the second inductor are sameeach other.
 2. The semiconductor device according to claim 1, whereinthe first inductor is inputted a different reference electric potentialfrom that of the second inductor.
 3. The semiconductor device accordingto claim 2, wherein a difference between the reference electricpotential given to the first inductor and the reference electricpotential given to the second inductor is equal to or more than 100V. 4.The semiconductor device according to claim 3, wherein the semiconductorchip comprises: a first circuit arranged on an opposite side to thesecond inductor through the first inductor as seen in plan view andconnected to the first inductor; and a second circuit arranged on anopposite side to the first inductor through the second inductor in planview and connected to the second inductor, wherein the referenceelectric potential that is different from the electric potential of thefirst circuit is given to the second circuit.
 5. The semiconductordevice according to claim 1, wherein the groove penetrates, in themultilayer interconnect layer, a layer in which the first inductor isformed and a layer in which the second inductor is formed.
 6. Thesemiconductor device according to claim 5, wherein the groove penetratesthe semiconductor chip.
 7. The semiconductor device according to claim6, wherein the groove penetrates the interconnect substrate.
 8. Thesemiconductor device according to claim 1, wherein the first inductorand the second inductor are formed over the same layer.
 9. Thesemiconductor device according to claim 1, wherein an interconnect isnot formed between the first inductor and the groove, and aninterconnect is not formed between the second inductor and the groove,in plan view.
 10. The semiconductor device according to claim 1, furthercomprising a resin layer that is filled in the groove.
 11. Thesemiconductor device according to claim 1, further comprising a magneticpermeable member arranged in the groove and positioned between the firstinductor and the second inductor.
 12. The semiconductor device accordingto claim 1, further comprising a sealing layer formed over a sidesurface of the groove.
 13. The semiconductor device according to claim1, further comprising a heat sink arranged over a surface of thesemiconductor chip that does not face the interconnect substrate. 14.The semiconductor device according to claim 13, wherein the groovepenetrates the semiconductor chip and the interconnect substrate, butdoes not penetrate the heat sink.
 15. The semiconductor device accordingto claim 1, further comprising a sealing resin that seals thesemiconductor chip, wherein the multilayer interconnect layer of thesemiconductor chip does not face the interconnect substrate, and isconnected to the interconnect substrate through a bonding wire, and thegroove is formed over a range from an upper surface of the sealing resinto the multilayer interconnect layer.
 16. The semiconductor deviceaccording to claim 1, further comprising a sealing resin that seals thesemiconductor chip, wherein the semiconductor chip isflip-chip-installed over the interconnect substrate, the sealing resinseals a space between an active surface of the semiconductor chip andthe interconnect substrate, and the groove is formed from a rear surfaceside of a substrate of the semiconductor chip to the sealing resin. 17.The semiconductor device according to claim 1, wherein said firstinductor is a coil comprising conductive segments in each of plurallayers of said multilayer interconnect layer and conductive viasconnecting said conductive segments.
 18. The semiconductor deviceaccording to claim 17, wherein each of said plural layers of saidmultilayer interconnect layer comprises a plurality of said conductivesegments spaced apart from each other.
 19. An electronic apparatuscomprising: a semiconductor device; and a mount substrate mounting thesemiconductor device; wherein the semiconductor device includes; aninterconnect substrate; a semiconductor chip mounted over a firstsurface of the interconnect substrate and having a multilayerinterconnect layer; a first inductor formed in the multilayerinterconnect layer, a rotational axis of the first inductor beinghorizontal relative to the interconnect substrate; a second inductorformed in the multilayer interconnect layer and facing the firstinductor, a rotational axis of the second inductor being horizontalrelative to the interconnect substrate; and a groove formed over themultilayer interconnect layer and positioned between the first inductorand the second inductor, wherein when layer numbers of layers in themultilayer interconnect layer are counted from a substrate of thesemiconductor, a layer number of a layer including the first inductorand a layer number of a layer including the second inductor are sameeach other.
 20. The electronic apparatus according to claim 19, whereinthe semiconductor device is divided by the groove.
 21. The electronicapparatus according to claim 19, wherein said first inductor is a coilcomprising conductive segments in each of plural layers of saidmultilayer interconnect layer and conductive vias connecting saidconductive segments.
 22. The electronic apparatus according to claim 21,wherein each of said plural layers of said multilayer interconnect layercomprises a plurality of said conductive segments spaced apart from eachother.